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ICE30N60W Datasheet, PDF (1/8 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET
Preliminary Data Sheet
ICE30N60W
ICE30N60W N-Channel
Enhancement Mode MOSFET
ID
V(BR)DSS
Product Summary
TA=25oC
ID=250uA
30A
600V
Max
Min
Features
• TO247 package
• Low rDS(on)
• Ultra Low Gate Charge
HALOGEN
FREE
rDS(on) VGS=10V 0.075Ω Typ
Qg VDS=480V 187nC Typ
D
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
G
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
TO247
1:G, 2:D,
3:S, 4:D,
(TO-247)
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=18A
Avalanche current, repetitive
I AR
limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=30A,
Tj=125oC
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Ptot
Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
Value
30
103
1100
18
50
±20
±30
313
-55 to +150
60
Unit
A
A
mJ
A
V/ns
V
W
oC
Ncm
SP-30N60W-000-2
05/15/2013
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