ICE30N080W Datasheet, PDF (1/8 Pages) Icemos Technology – Enhancement Mode MOSFET

Preliminary Data Sheet
ICE30N080W
ICE30N080W N-Channel
Enhancement Mode MOSFET
I_D
V_(BR)DSS
Product Summary
T_A=25^oC
I_D=1mA
43A
300V
Max
Min
Features
• TO247 package
• Low r_DS(on)
• Ultra Low Gate Charge
HALOGEN
FREE
r_DS(on) V_GS=10V 0.063Ω Typ
Q_g V_DS=240V 187nC Typ
D
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
G
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
TO247
1:G, 2:D,
3:S, 4:D,
(TO-247)
Maximum ratings ^b , at T_j=25^oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
I_D
I_{D, pulse}
E _AS
T_c=25^oC
T_c=25^oC
I_D=21.5A
Avalanche current, repetitive
I _AR
limited by T_jmax
Value
Unit
43
A
129
A
1200
mJ
21.5
A
MOSFET dv/dt ruggedness
dv/dt
I_D=43A, T_j=125^oC
50
V/ns
Gate source voltage
V_GS
Power dissipation
Operating and storage temperature
Mounting torque
P_tot
T_j, T_stg
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
Static
AC (f>1Hz)
T_c=25^oC
M 3 & 3.5 screws
±20
±30
417
-55 to +150
60
V
W
o_C
Ncm
SP-30N080W-000-0
10/17/2013
1