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ICE20N65FP Datasheet, PDF (1/9 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET
Preliminary Data Sheet
ICE20N65FP
ICE20N65FP N-Channel
Enhancement Mode MOSFET
Product Summary
ID
TA=25oC
BVDSS @Tjmax ID=250uA
20A
700V
Max
Min
Features
• Low rDS(on)
• Ultra Low Gate Charge
HALOGEN
FREE
rDS(on)
Qg
VGS=10V 0.17Ω Typ
VDS=480V 82nC Typ
D
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
G
• Increased transconductance performance
• Optimized design for high performance power systems
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK
Isolated (T0-220)
Maximum ratings b , at Tj=25oC, unless otherwise specified
1=Gate, 2=Drain,
3=Source
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=11.5A
20
A
60
A
690
mJ
Avalanche current, repetitive
I AR
limited by Tjmax
10
A
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=20A,
Tj=125oC
50
V/ns
Gate source voltage
static
VGS
AC (f>1Hz)
±20
V
±30
Power dissipation
Operating and storage temperature
Mounting torque
Ptot
Tj, Tstg
Tc=25oC
M 2.5 screws
35
-55 to +150
50
W
oC
Ncm
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-20N65FP-000-3a
06/05/2013
1