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ICE17N60FP Datasheet, PDF (1/9 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET
Preliminary Data Sheet
ICE17N60FP
ICE17N60FP N-Channel
Enhancement Mode MOSFET
ID
V(BR)DSS
Product Summary
TA=25oC
ID=250uA
17A
600V
Max
Min
Features
• Low rDS(on)
• Ultra Low Gate Charge
HALOGEN
FREE
rDS(on) VGS=10V 0.19Ω
Typ
Qg
VDS=480V 59nC
Typ
D
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
G
• Increased transconductance performance
• Optimized design for high performance power systems
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Maximum ratings b , at Tj=25oC, unless otherwise specified
T0220 Full-PAK
Isolated (T0-220)
1=Gate, 2=Drain,
3=Source
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=8.5A
17
A
51
A
460
mJ
Avalanche current, repetitive
I AR
limited by Tjmax
8.5
A
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=17A,
Tj=125oC
50
V/ns
Gate source voltage
Static
VGS
AC (f>1Hz)
±20
V
±30
Power dissipation
Operating and storage temperature
Mounting torque
Ptot
Tj, Tstg
Tc=25oC
M 2.5 screws
35
-55 to +150
50
W
oC
Ncm
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-17N60FP-000-3
05/15/2013
1