ICE15N65FP Datasheet, PDF (1/9 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

Preliminary Data Sheet
ICE15N65FP
ICE15N65FP N-Channel
Enhancement Mode MOSFET
I_D
V_(BR)DSS
Product Summary
T_A=25^oC
I_D=250uA
15A
650V
Max
Min
Features
• Low r_DS(on)
• Ultra Low Gate Charge
HALOGEN
FREE
r_DS(on) V_GS=10V 0.25Ω
Typ
Q_g
V_DS=480V 59nC
Typ
D
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
G
• Increased transconductance performance
• Optimized design for high performance power systems
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK
Isolated (T0-220)
Maximum ratings ^b , at T_j=25^oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
I_D
I_{D, pulse}
E _AS
T_c=25^oC
T_c=25^oC
I_D=7.5A
Avalanche current, repetitive
I _AR
limited by T_jmax
MOSFET dv/dt ruggedness
dv/dt
V_DS=480V, I_D=15A,
T_j=125^oC
Gate source voltage
Static
V_GS
AC (f>1Hz)
Power dissipation
P_tot
T_c=25^oC
Operating and storage temperature
T_j, T_stg
Mounting torque
M 2.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
Value
Unit
15
A
45
A
460
mJ
7.5
A
50
V/ns
±20
±30
35
-55 to +150
50
V
W
o_C
Ncm
SP-15N65FP-000-2a
06/05/2013
1