ICE11N70 Datasheet, PDF (1/9 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

Preliminary Data Sheet
ICE11N70
ICE11N70 N-Channel
Enhancement Mode MOSFET
I_D
V_(BR)DSS
Product Summary
T_A=25^oC
I_D=250uA
11A
700V
Max
Min
Features
• Low r_DS(on)
• Ultra Low Gate Charge
HALOGEN
FREE
r_DS(on) V_GS=10V 0.20Ω
Typ
Q_g
V_DS=480V 85nC
Typ
D
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
G
• Increased transconductance performance
• Optimized design for high performance power systems
S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source.
Maximum ratings ^b , at T_j=25°C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
I_D
I_{D, pulse}
T_c=25^oC
T_c=25^oC
Avalanche energy, single pulse
E _AS
I_D=7.5A
Avalanche current, repetitive
I _AR
limited by T_jmax
MOSFET dv/dt ruggedness
dv/dt
V_DS=480V, I_D=11A,
T_j=125^oC
Gate source voltage
Static
V_GS
AC (f>1Hz)
Power dissipation
Operating and storage temperature
Mounting torque
P_tot
T_j, T_stg
T_c=25°C
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
Value
Unit
11
A
33
A
280
mJ
7.5
A
50
V/ns
±20
±30
108
-55 to +150
60
V
W
°C
Ncm
SP-11N70-000-4
07/17/2013
1