ICE11N65FP Datasheet, PDF (1/9 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

Preliminary Data Sheet
ICE11N65FP
ICE11N65FP N-Channel
Enhancement Mode MOSFET
I_D
V_(BR)DSS
Product Summary
T_A=25^oC
11A
I_D=250uA 650V
Max
Min
Features
• Low r_DS(on)
• Ultra Low Gate Charge
• High dv/dt capability
HALOGEN
FREE
r_DS(on) V_GS=10V
0.25
Typ
Q_g
V_DS=480V 59nC
Typ
D
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
G
• Optimized design for high performance power systems
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK
Isolated (T0-220)
Maximum ratings ^b , at T_j=25°C, unless otherwise specified
Parameter
Symbol
Conditions
1=Gate, 2=Drain,
3=Source
Value
Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
I_D
I_{D, pulse}
E _AS
T_c=25^oC
T_c=25^oC
I_D=7.5A
11
A
35
A
460
mJ
Avalanche current, repetitive
I _AR
limited by T_jmax
7.5
A
MOSFET dv/dt ruggedness
Gate source voltage
dv/dt
V_GS
V_DS=480V, I_D=11A,
T_j=125^oC
static
AC (f>1Hz)
50
±20
±30
V/ns
V
Power dissipation
Operating and storage temperature
Mounting torque
P_tot
T_j, T_stg
T_c=25°C
M 2.5 screws
35
-55 to +150
50
W
°C
Ncm
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-11N65FP-000-3a
06/13/2013
1