ICE10N60 Datasheet, PDF (1/9 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

Preliminary Data Sheet
ICE10N60
ICE10N60 N-Channel
Enhancement Mode MOSFET
I_D
V_(BR)DSS
Product Summary
T_A=25^oC
I_D=250uA
10A
600V
Max
Min
Features
• Low r_DS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
r_DS(on) V_GS=10V
0.28
Typ
Q_g
V_DS=480V 41nC
Typ
D
G
S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source.
Maximum ratings ^b , at T_j=25^oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
I_D
I_{D, pulse}
E _AS
T_c=25^oC
T_c=25^oC
I_D=8.3A
Avalanche current, repetitive
I _AR
limited by T_jmax
MOSFET dv/dt ruggedness
dv/dt
V_DS=480V, I_D=10A,
T_j=125^oC
Gate source voltage
static
V_GS
AC (f>1Hz)
Power dissipation
P_tot
T_c=25^oC
Operating and storage temperature
T_j, T_stg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
Value
10
30
340
5
50
±20
±30
95
-55 to +150
60
Unit
A
A
mJ
A
V/ns
V
W
o_C
Ncm
SP-10N60-000-3
05/15/2013
1