HYMD264646B8-M Datasheet, PDF (8/16 Pages) Hynix Semiconductor – Unbuffered DDR SDRAM DIMM

HYMD264646B(L)8-M/K/H/L
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Test Condition
Speed
Unit Note
-M -K -H -L
Operating Current
IDD0
One bank; Active - Precharge;
tRC=tRC(min); tCK=tCK(min); DQ,DM and
DQS inputs changing twice per clock cycle;
address and control inputs changing once
per clock cycle
1440 1320 1320 1200 mA
Operating Current
IDD1
One bank; Active - Read - Precharge; Burst
Length=2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once
1440 1320 1320 1200 mA
per clock cycle
Precharge Power Down
Standby Current
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
160
mA
Idle Standby Current
IDD2F
/CS=High, All banks idle ; tCK=tCK(min);
CKE= High; address and control inputs
changing once per clock cycle. VIN=VREF
for DQ, DQS and DM
800 720 720 640 mA
Active Power Down
Standby Current
IDD3P
One bank active; Power down mode;
CKE=Low, tCK=tCK(min)
240
mA
/CS=HIGH; CKE=HIGH; One bank; Active-
Precharge; tR=tRAS(max); tCK=tCK(min);
Active Standby Current IDD3N DQ, DM and DQS inputs changing twice per 960 880 880 800 mA
clock cycle; Address and other control inputs
changing once per clock cycle
Operating Current
IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing
once per clock cycle; tCK=tCK(min);
IOUT=0mA
1840
1640
1640 1520
Operating Current
Burst=2; Writes; Continuous burst; One bank
IDD4W
active; Address and control inputs changing
once per clock cycle; tCK=tCK(min); DQ,
1920
1800
1800
1680
mA
DM, and DQS inputs changing twice per
clock cycle
Auto Refresh Current
IDD5
tRC=tRFC(min) - 8*tCK for PC200 at
100Mhz, 10*tCK for PC266A & PC266B at
133Mhz; distributed refresh
1920 1800 1800 1680
Self Refresh Current
IDD6
CKE=<0.2V; External clock on; ^Normal
tCK =tCK(min)
Low Power
48
24
mA
mA
Operating Current - Four
Bank Operation
IDD7
Four bank interleaving with BL=4 Refer to the
following page for detailed test condition
2640
2520
2520
2400
mA
Rev. 0.2/Dec. 02
8