HYMD232G726A8-M Datasheet, PDF (8/16 Pages) Hynix Semiconductor – Registered DDR SDRAM DIMM

HYMD232G726A(L)8-M/K/H/L
DC CHARACTERISTICS II (TA=0 to 70 ^oC, Voltage referenced to VSS = 0V)
Parameter Symbol
Test Condition
Speed
Unit Note
-M -K -H -L
Operating Current
One bank; Active - Precharge; tRC=tRC(min);
IDD0
tCK=tCK(min); DQ,DM and DQS inputs changing
twice per clock cycle; address and control inputs
1595
1505
1505
1460
mA
changing once per clock cycle
Operating Current
IDD1
One bank; Active - Read - Precharge; Burst
Length =2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per
clock cycle
2000 1820 1820 1730 mA
Precharge Power
Down Standby
Current
All banks idle; Power down mode; CKE=Low,
IDD2P _tCK=tCK(min)
830
mA
/CS=High, All banks idle; tCK=tCK(min);
Idle Standby Current
IDD2F
CKE=High
; address and control inputs changing once per
1100 1010 1010 965
mA
clock cycle. VIN=VREF for DQ, DQS and DM
Active Power Down
One bank active; Power down mode; CKE=Low,
Standby Current
IDD3P _tCK=tCK(min)
875
mA
Active Standby
Current
/CS=HIGH; CKE=HIGH; One bank; Active-
Precharge; tRC=tRAS(max); tCK=tCK(min); DQ,
IDD3N DM and DQS inputs changing twice per clock
1190 1100 1100 1100 mA
cycle; Address and other control inputs changing
once per clock cycle
Operating Current
IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing once 3260
per clock cycle; tCK=tCK(min); IOUT=0mA
2900
2900
2360
Operating Current
Burst=2; Writes; Continuous burst; One bank
IDD4W
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); DQ, DM, and DQS
3260
2900
2900
2360
mA
inputs changing twice per clock cycle
Auto Refresh Current
IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,
10*tCK for DDR266A & DDR266B at 133Mhz;
distributed refresh
2420 2240 2240 2105
Self Refresh Current
IDD6
CKE=<0.2V; External clock on;
tCK =tCK(min)
Normal
Low Power
377
363.5
mA
mA
Operating Current -
Four Bank Operation
Four bank interleaving with BL=4 Refer to the
IDD7 _{following page for detailed test condition}
3485 3395 3395 3170 mA
Rev. 0.2/May. 02
8