HYMD232646C8J-J Datasheet, PDF (8/16 Pages) Hynix Semiconductor – Unbuffered DDR SDRAM DIMM

HYMD232646C(L)8-M/K/H/L
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Test Condition
Speed
Unit Note
-M -K -H -L
Operating Current
One bank; Active Precharge; tRC=tRC(min);
IDD0
tCK=tCK(min); DQ,DM and DQS inputs
changing twice per clock cycle; address and
840
760
760
720 mA
control inputs changing once per clock cycle
Operating Current
One bank; Active - Read Precharge; Burst
IDD1
Length =2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per
1200
1040
1040
960
mA
clock cycle
Precharge Power
Down Standby Current
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
160
mA
Idle Standby Current
/CS=High, All banks idle ; tCK=tCK(min);
IDD2F
CKE= High; address and control inputs
changing once per clock cycle. VIN=VREF for
400
320
320
280 mA
DQ, DQS and DM
Active Power Down
Standby Current
IDD3P
One bank active; Power down mode;
CKE=Low, tCK=tCK(min)
200
mA
/CS=HIGH; CKE=HIGH; One bank; Active
Precharge; tRC=tRAS(max); tCK=tCK(min);
Active Standby Current IDD3N DQ, DM and DQS inputs changing twice per 480 400 400 400 mA
clock cycle; Address and other control inputs
changing once per clock cycle
Operating Current
IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing
once per clock cycle; tCK=tCK(min);
IOUT=0mA
2320
2000
2000
1520
Operating Current
Burst=2; Writes; Continuous burst; One bank
active; Address and control inputs changing
IDD4W once per clock cycle; tCK=tCK(min); DQ, DM, 2320
2000
2000
1520
mA
and DQS inputs changing twice per clock
cycle
Auto Refresh Current
IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at
100Mhz, 10*tCK for DDR266A & DDR266B at
133Mhz; distributed refresh
1840
1680
1680 1560
Self Refresh Current
IDD6
CKE=<0.2V; External clock on; ^Normal
tCK=tCK(min)
Low Power
24
12
mA
mA
Operating Current -
Four Bank Operation
IDD7
Four bank interleaving with BL=4 Refer to the
following page for detailed test condition
2520
2440
2440 2240
mA
Rev. 0.1 / Mar. 2003
8