HYMD216726A6-M Datasheet, PDF (8/16 Pages) Hynix Semiconductor – Unbuffered DDR SO-DIMM

HYMD216726A(L)6-M/K/H/L
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Test Condition
Speed
Unit Note
-M -K -H -L
Operating Current
One bank; Active - Precharge; tRC=tRC(min);
IDD0
tCK=tCK(min); DQ,DM and DQS inputs
changing twice per clock cycle; address and
525 475 475 450 mA
control inputs changing once per clock cycle
Operating Current
One bank; Active - Read - Precharge; Burst
IDD1
Length=2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per
750
650
650
600
mA
clock cycle
Precharge Power Down
Standby Current
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
100
mA
Idle Standby Current
/CS=High, All banks idle; tCK=tCK(min); CKE=
IDD2F
High; address and control inputs changing
once per clock cycle. VIN=VREF for DQ, DQS
250
200
200
175
mA
and DM
Active Power Down
Standby Current
IDD3P
One bank active; Power down mode;
CKE=Low, tCK=tCK(min)
125
mA
Active Standby Current
/CS=HIGH; CKE=HIGH; One bank; Active-
Precharge; tRC=tRAS(max); tCK=tCK(min);
IDD3N DQ, DM and DQS inputs changing twice per 300 250 250 250 mA
clock cycle; Address and other control inputs
changing once per clock cycle
Operating Current
Burst=2; Reads; Continuous burst; One bank
IDD4R
active; Address and control inputs changing
once per clock cycle; tCK=tCK(min);
1450 1250 1250 950
IOUT=0mA
Operating Current
Burst=2; Writes; Continuous burst; One bank
IDD4W
active; Address and control inputs changing
once per clock cycle; tCK=tCK(min); DQ, DM
1450 1250 1250
950
mA
and DQS inputs changing twice per clock cycle
Auto Refresh Current
IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at
100Mhz, 10*tCK for DDR266A & DDR266B at 1150 1050 1050 975
133Mhz; distributed refresh
Self Refresh Current
IDD6
CKE=<0.2V; External clock on;
tCK =tCK(min)
Normal
Low Power
15
7.5
mA
mA
Operating Current - Four
Bank Operation
IDD7
Four bank interleaving with BL=4 Refer to the
following page for detailed test condition
1675
1625
1625
1450
mA
Rev. 0.2/May. 02
8