HYMD216646A6-M Datasheet, PDF (8/16 Pages) Hynix Semiconductor – Unbuffered DDR SDRAM DIMM

HYMD216646A(L)6-M/K/H/L
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Test Condition
Speed
Unit Note
-M -K -H -L
Operating Current
IDD0
One bank; Active Precharge; tRC=tRC(min);
tCK= tCK(min); DQ,DM and DQS inputs
changing twice per clock cycle; address and
control inputs changing once per clock cycle
420 380 380 360 mA
Operating Current
One bank; Active - Read - Precharge; Burst
IDD1
Length=2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per
600
520
520
480 mA
clock cycle
Precharge Power Down
Standby Current
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
80
mA
Idle Standby Current
/CS=High, All banks idle; tCK=tCK(min); CKE=
IDD2F
High; address and control inputs changing once
per clock cycle. VIN=VREF for DQ, DQS and
200
160
160
140 mA
DM
Active Power Down
Standby Current
IDD3P
One bank active; Power down mode;
CKE=Low, tCK=tCK(min)
100
mA
Active Standby Current
IDD3N
/CS=HIGH; CKE=HIGH; One bank; Active-
Precharge; tRC=tRAS(max); tCK=tCK(min);
DQ, DM and DQS inputs changing twice per
clock cycle; Address and other control inputs
changing once per clock cycle
240 200 200 200 mA
Operating Current
IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing
once per clock cycle; tCK=tCK(min);
IOUT=0mA
1160 1000 1000 760
Operating Current
Burst=2; Writes; Continuous burst; One bank
IDD4W
active; Address and control inputs changing
once per clock cycle; tCK=tCK(min); DQ, DM
mA
1160 1000 1000 760
and DQS inputs changing twice per clock cycle
Auto Refresh Current
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,
IDD5 10*tCK for DDR266A & DDR266B at 133Mhz; 920 840 840 780
distributed refresh
Self Refresh Current
IDD6
CKE=<0.2V; External clock on;
tCK =tCK(min)
Normal
Low Power
12
6
mA
mA
Operating Current -
Four Bank Operation
IDD7
Four bank interleaving with BL=4 Refer to the
following page for detailed test condition
1340
1300
1300
1160
mA
Rev. 0.2/May. 02
8