HYMD212G726AS4M-M Datasheet, PDF (8/16 Pages) Hynix Semiconductor – Low Profile Registered DDR SDRAM DIMM

HYMD212G726A(L)S4M-M/K/H/L
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS=0V)
Parameter
Symbol
Test Condition
Speed
Unit Note
-M -K -H -L
Operating Current
IDD0
One bank; Active - Precharge; tRC=tRC(min);
tCK= tCK(min); DQ,DM and DQS inputs changing
twice per clock cycle; address and control inputs
3620
3260
3260
3170
mA
changing once per clock cycle
Operating Current
IDD1
One bank; Active - Read - Precharge; Burst
Length =2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per
clock cycle
4430 3890 3890 3710 mA
Precharge Power Down
Standby Current
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
1370
mA
Idle Standby Current
/CS=High, All banks idle; tCK=tCK(min); CKE=
IDD2F High; address and control inputs changing once 2450 2090 2090 1910 mA
per clock cycle. VIN=VREF for DQ, DQS, and DM
Active Power Down
Standby Current
IDD3P
One bank active; Power down mode; CKE=Low,
tCK=tCK(min)
1550
mA
Active Standby Current
/CS=HIGH, CKE=HIGH; One bank; Active-
Precharge; tRC=tRAS(max); tCK=tCK(min); DQ,
IDD3N DM and DQS inputs changing twice per clock
2810 2450 2450 2450 mA
cycle; Address and other control inputs changing
once per clock cycle
Operating Current
IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing once 6770 5870 5870 4790
per clock cycle; tCK=tCK(min); IOUT=0mA
Operating Current
Burst=2; Writes; Continuous burst; One bank
IDD4W
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); DQ, DM, and DQS
6770
5870
5870
4790
mA
inputs changing twice per clock cycle
Auto Refresh Current
IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,
10*tCK for DDR266A & DDR266B at 133Mhz;
distributed refresh
5570 5030 5030 4760
Self Refresh Current
IDD6
CKE=<0.2V; External clock on;
tCK =tCK(min)
Normal
Low Power
458
404
mA
mA
Operating Current -
Four Bank Operation
IDD7
Four bank interleaving with BL=4 Refer to the
following page for detailed test condition
7220 6860 6860 6860 mA
Rev. 0.2/May. 02
8