HYMD132G725BL4-M Datasheet, PDF (8/17 Pages) Hynix Semiconductor – Registered DDR SDRAM DIMM

HYMD132G725B(L)4-M/K/H/L
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS=0V)
Parameter
Operating Current
Operating Current
Precharge Power Down
Standby Current
Idle Standby Current
Active Power Down
Standby Current
Active Standby Current
Operating Current
Operating Current
Auto Refresh Current
Self Refresh Current
Operating Current - Four
Bank Operation
Symbol
Test Condition
Speed
Unit Note
-M -K -H -L
IDD0
One bank; Active - Precharge; tRC=tRC(min);
tCK=tCK(min); DQ,DM and DQS inputs changing
twice per clock cycle; address and control inputs
2270
2090
2090
2090
mA
changing once per clock cycle
IDD1
One bank; Active - Read - Precharge;
Burst Length=2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per
2630 2450 2450 2090
mA
clock cycle
IDD2P
All banks idle; Power down mode ; CKE=Low,
tCK=tCK(min)
920
mA
/CS=High, All banks idle; tCK=tCK(min);
IDD2F
CKE=High; address and control inputs changing
once per clock cycle.
1280
mA
VIN=VREF for DQ, DQS and DM
IDD3P
One bank active; Power down mode; CKE=Low,
tCK=tCK(min)
1010
mA
/CS=HIGH; CKE=HIGH; One bank; Active-
Precharge; tRC=tRAS(max); tCK=tCK(min); DQ,
IDD3N DM and DQS inputs changing twice per clock
1370
mA
cycle; Address and other control inputs changing
once per clock cycle
Burst=2; Reads; Continuous burst; One bank
IDD4R active; Address and control inputs changing once 4070 4070 4070 3350 mA
per clock cycle; tCK=tCK(min); IOUT=0mA
Burst=2; Writes; Continuous burst; One bank
IDD4W
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); DQ, DM and DQS
4070
4070
4070
3350
mA
inputs changing twice per clock cycle
IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,
10*tCK for DDR266A & DDR266B at 133Mhz; 3050 3050 3050 2870 mA
distributed refresh
IDD6
CKE=<0.2V; External clock on;
tCK=tCK(min)
Normal
Low Power
386
368
mA
mA
IDD7
Four bank interleaving with BL=4, Refer to the
following page for detailed test condition
5330 5330 5330 4610 mA
Rev. 0.3/May. 02
8