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| HYMD264G726AL4M-M Datasheet, PDF (6/16 Pages) Hynix Semiconductor – Low Profile Registered DDR SDRAM DIMM | |||
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CAPACITANCE (TA=25oC, f=100MHz )
HYMD264G726A(L)4M-M/K/H/L
Parameter
Pin
Input Capacitance
A0 ~ A12, BA0, BA1
Input Capacitance
Input Capacitance
/RAS, /CAS, /WE
CKE0
Input Capacitance
Input Capacitance
CS0
CK0, /CK0
Data Input / Output Capacitance
Data Input / Output Capacitance
DQ0 ~ DQ63, DQS0 ~ DQS17
CB0 ~ CB7
Symbol Min
CIN1
TBD
CIN2
TBD
CIN3
TBD
CIN4
TBD
CIN5
TBD
CIO1
TBD
CIO2
TBD
Max
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Unit
pF
pF
pF
pF
pF
pF
pF
Note :
1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
Output
VTT
RT=50â¦
Zo=50â¦
CL=30pF
VREF
Rev. 0.2/May. 02
6
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