HY57V658020B Datasheet, PDF (6/12 Pages) Hynix Semiconductor – 4 Banks x 2M x 8Bit Synchronous DRAM

HY57V658020B
DC CHARACTERISTICS II (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V)
Parameter
Symbol
Test Condition
-75
Operating Current
IDD1
Burst length=1, One bank active
tRC ≥ tRC(min), IOL=0mA
90
Precharge Standby Current
in Power Down Mode
IDD2P
IDD2PS
CKE ≤ VIL(max), tCK = min
CKE ≤ VIL(max), tCK = ∞
Precharge Standby Current
in Non Power Down Mode
IDD2N
IDD2NS
CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min
Input signals are changed one time during
2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V
CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
Active Standby Current
in Power Down Mode
IDD3P
IDD3PS
CKE ≤ VIL(max), tCK = min
CKE ≤ VIL(max), tCK = ∞
Active Standby Current
in Non Power Down Mode
IDD3N
IDD3NS
CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min
Input signals are changed one time during
2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V
CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
Burst Mode Operating Current IDD4
tCK ≥ tCK(min), IOL=0mA
All banks active
CL=3
120
CL=2
90
Auto Refresh Current
IDD5
tRRC ≥ tRRC(min), All banks active
200
Self Refresh Current
IDD6
CKE ≤ 0.2V
Speed
-8 -10P -10S -10
80
70
70
60
2
2
15
15
5
5
30
30
110 90
90
90
90
90
90
90
200 180 180 150
2
500
Unit Note
mA
1
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
mA
mA
2
mA
3
uA
4
Note :
1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V658020BTC-75/8/10P/10S/10
4.HY57V658020BLTC-75/8/10P/10S/10
Rev. 1.6/Nov. 01
6