HY57V161610ETP-I Datasheet, PDF (6/13 Pages) Hynix Semiconductor – 2 Banks x 512K x 16 Bit Synchronous DRAM

HY57V161610ETP-I
DC CHARACTERISTICS II (TA= -40°C to 85°C, VDD=3.0V to 3.6V, VSS=0V^Note1,2)
Parameter
Symbol
Test Condition
Speed
Unit Note
-5
-55
-6
-7
-8
-10
-15
Operating Current
IDD1
Burst Length=1, One bank active
tRAS ≥ tRAS(min),tRP ≥ tRP(min),
IO=0mA
130 130 120
110
110 110 100
mA
2
Precharge Standby
Current
in power down mode
IDD2P
IDD2PS
CKE ≤ VIL(max), tCK = 15ns
CKE ≤ VIL(max), tCK = ∞
2
mA
1
CKE ≥ VIH(min), CS ≥ VIH(min), tCK =
15ns
Precharge Standby
Current
IDD2N
Input signals are changed one time
during 2Clks. All other pins ≥ VDD-0.2V
25
in non power down
or ≤ 0.2V
mA
mode
IDD2NS
CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
15
Active Standby Current
in power down mode
IDD3P
IDD3PS
CKE ≤ VIL(max), tCK = min
CKE ≤ VIL(max), tCK = ∞
3.0
mA
3.0
CKE ≥ VIH(min), CS ≥ VIH(min), tCK =
min
IDD3N
Input signals are changed one time
50
Active Standby Current
during 2CLKs. All other pins ≥ VDD-
in non power down
0.2V or ≤ 0.2V
mA
mode
IDD3NS
CKE ≥ VIH(min), tCK = ∞
Input signals are stable
30
Burst Mode Operating
Current
IDD4
tCK ≥ tCK(min),
tRAS ≥ tRAS(min),
IO=0mA
All banks active
CL=3
130 130 120
110
110
90
80
CL=2
-
-
110
110
-
-
-
mA
3
CL=1
-
-
-
-
-
-
70
Auto Refresh Current IDD5
tRRC ≥ tRRC(min), All banks active
130 130 110
110
110 110 100
mA
Self Refresh Current
IDD6
CKE ≤ 0.2V
2
mA
Note :
1.VDD(min) is 3.15V when HY57V161610ETP-7I operates at CAS latency=2 and tCK2=8.9ns.
2.VDD(min) of HY57V161610ETP-5I/55I is 3.15V
3.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open.
Rev. 0.1 / Nov. 2003
6