HY57V161610ET-I Datasheet, PDF (5/13 Pages) Hynix Semiconductor – 2 Banks x 512K x 16 Bit Synchronous DRAM

CAPACITANCE (TA=25°C, f=1MHz)
Parameter
Input capacitance
Data input / output capacitance
Pin
CLK
A0 ~ A10, BA
CKE, CS, RAS, CAS, WE, UDQM, LDQM
DQ0 ~ DQ15
OUTPUT LOAD CIRCUIT
Output
Vtt=1.4V
RT=250 Ω
30pF
Output
HY57V161610ET-I
Symbol
Min
Max
Unit
CI1
2.5
4
pF
CI2
2.5
5
pF
CI/O
4
6.5
pF
30pF
DC Output Load Circuit
AC Output Load Circuit
DC CHARACTERISTICS I (TA=-40°C to 85°C)
Parameter
Symbol
Min.
Max
Power Supply Voltage
VDD
3.0
3.6
Input leakage current
IL
-1
1
Output leakage current
IO
-1
1
Output high voltage
VOH
2.4
-
Output low voltage
VOL
-
0.4
Note :
1.VDD(min) is 3.15V when HY57V161610ET-7I operates at CAS latency=2 and tCK2=8.9ns.
2.VDD(min) of HY57V161610ET-5I/55I is 3.15V
3.VIN = 0 to 3.6V, All other pins are not under test = 0V
4.DOUT is disabled, VOUT=0 to 3.6V
Rev. 0.1 / Nov. 2003
Unit
Note
V
1, 2
uA
3
uA
4
V
IOH = -4mA
V
IOL =+4mA
5