HY57V161610E Datasheet, PDF (5/13 Pages) Hynix Semiconductor – 2 Banks x 512K x 16 Bit Synchronous DRAM

CAPACITANCE (TA=25°C, f=1MHz)
Parameter
Pin
Symbol
Min
Input capacitance
CLK
CI1
2.5
A0 ~ A10, BA
CI2
2.5
CKE, CS, RAS, CAS, WE, UDQM, LDQM
Data input / output capacitance DQ0 ~ DQ15
CI/O
4
OUTPUT LOAD CIRCUIT
HY57V161610E
Max
Unit
4
pF
5
pF
6.5
pF
Output
Vtt=1.4V
RT=250 Ω
30pF
Output
30pF
DC Output Load Circuit
AC Output Load Circuit
DC CHARACTERISTICS I (TA=0°C to 70°C)
Parameter
Symbol
Min.
Max
Unit
Power Supply Voltage
VDD
3.0
3.6
V
Input leakage current
IL
-1
1
uA
Output leakage current
IO
-1
1
uA
Output high voltage
VOH
2.4
-
V
Output low voltage
VOL
-
0.4
V
Note :
1.VDD(min) is 3.15V when HY57V161610ET-7 operates at CAS latency=2 and tCK2=8.9ns.
2.VDD(min) of HY57V161610ET-5/55 is 3.15V
3.VIN = 0 to 3.6V, All other pins are not under test = 0V
4.DOUT is disabled, VOUT=0 to 3.6V
Note
1, 2
3
4
IOH = -4mA
IOL =+4mA
Rev. 0.2 / Aug. 2003
5