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HMT325R7CFR8A Datasheet, PDF (46/76 Pages) Hynix Semiconductor – DDR3L SDRAM Registered DIMM Based on 2Gb C-die
Refresh parameters by device density
Refresh parameters by device density
Parameter
RTT_Nom Setting
512Mb 1Gb 2Gb 4Gb
REF command ACT or
REF command time
tRFC
90
110
160
260
Average periodic
refresh interval
tREFI
0 C  TCASE  85 C
85 C  TCASE  95 C
7.8
3.9
7.8
3.9
7.8
3.9
7.8
3.9
8Gb Units Notes
350 ns
7.8 us
3.9 us 1
Rev. 1.0 / Aug. 2012
46