H5MS1G22MFP-E3M Datasheet, PDF (41/63 Pages) Hynix Semiconductor – 1Gbit MOBILE DDR SDRAM based on 8M x 4Bank x32 I/O

Mobile DDR SDRAM 1Gbit (32M x 32bit)
H5MS1G22MFP Series / H5MS1G32MFP Series
WRITE to WRITE
Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either case,
a continuous flow of input data, can be maintained. The new WRITE command can be issued on any positive edge of
the clock following the previous WRITE command.The first data-in element from the new burst is applied after either
the last element of a completed burst or the last desired data element of a longer burst which is being truncated. The
new WRITE command should be issued X cycles after the first WRITE command, where X equals the number of
desired data-in element pairs.
/CLK
CLK
Command
WRITE
NOP
WRITE
NOP
NOP
NOP
Address
DQS
BA,
Col b
tDQSSmin
BA,
Col n
DQ
DI
b
DI
n
DM
DQS
tDQSSmax
DI
DI
DQ
b
n
DM
1) DI b (n) = Data In to column b (column n)
2) 3 subsequent elements of Data In are applied in the programmed order following DI b.
3 subsequent elements of Data In are applied in the programmed order following DI n.
3) Non-interrupted bursts of 4 are shown.
4) Each WRITE command may be to any active bank
Concatenated Write Bursts
Don't Care
Rev 1.2 / Jun. 2008
41