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HY62UF16804B Datasheet, PDF (4/10 Pages) Hynix Semiconductor – 512Kx16bit full CMOS SRAM | |||
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HY62UF16804B
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
VIH
VIL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min. Typ. Max. Unit
2.7 3.0
3.3
V
0
0
0
V
2.2
- Vcc+0.3 V
-0.3(1) -
0.6
V
Note : 1. VIL = -1.5V for pulse width less than 30ns
DC ELECTRICAL CHARACTERISTICS
Vcc = 2.7V~3.3V, TA = 0°C to 70°C/ -40°C to 85°C
Sym
Parameter
Test Condition
Min. Typ. Max. Unit
ILI Input Leakage Current
Vss < VIN < Vcc
-1
-
1
uA
Vss < VOUT < Vcc, /CS = VIH or
ILO Output Leakage Current
/OE = VIH or /WE = VIL,
-1
-
1
uA
/UB = /LB = VIH
Icc
Operating Power Supply
Current
/CS = VIL, VIN = VIH or VIL, II/O = 0mA -
-
3 mA
Icc1
Average Operating
Current
Cycle Time=Min,100% duty,
II/O = 0mA, /CS = VIL,VIN = VIH or VIL
-
Cycle time = 1us, 100% duty,
II/O = 0mA, /CS < 0.2V, VIN<0.2V
-
-
20 mA
-
2 mA
ISB
TTL Standby Current
(TTL Input)
/CS = VIH or /UB=/LB= VIH,
VIN = VIH or VIL
-
-
0.3 mA
/CS > Vcc - 0.2V or
ISB1
Standby Current
(CMOS Input)
/UB=/LB > Vcc-0.2V,
VIN > Vcc-0.2V or
LL
-
1
15 uA
VIN < Vss+0.2V
VOL Output Low Voltage
IOL = 2.1mA
-
-
0.4
V
VOH Output High Voltage
IOH = -1.0mA
2.4
-
-
V
Note : Typical values are at Vcc = 3.0V, TA = 25°C
CAPACITANCE
(Temp = 25°C, f = 1.0MHz)
Symbol
Parameter
CIN
COUT
Input Capacitance(Add, /CS, /WE, /UB, /LB, /OE)
Output Capacitance(I/O)
Conditio
n
VIN = 0V
VI/O = 0V
Max.
8
10
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev.01/Mar. 2002
3
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