HY62LF16806B Datasheet, PDF (4/11 Pages) Hynix Semiconductor – 512Kx16bit full CMOS SRAM

HY62LF16806B Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
VIH
VIL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
2.3
0
2.0
-0.3(1)
Typ.
2.5
0
-
-
Max.
Unit
2.7
V
0
V
Vcc+0.3
V
0.6
V
Note : 1. VIL = -1.5V for pulse width less than 30ns
DC ELECTRICAL CHARACTERISTICS
Vcc = 2.3V~2.7V, TA = 0°C to 70°C / -40°C to 85°C
Sym
Parameter
Test Condition
Min Typ^1. Max Unit
ILI Input Leakage Current
Vss < VIN < Vcc
-1 -
1
uA
Vss < VOUT < Vcc,
-1 -
1
uA
ILO Output Leakage Current
/CS1 = VIH or CS2=VIL or
/OE = VIH or /WE = VIL or
/UB = VIH , /LB = VIH
Icc Operating Power Supply Current
/CS1 = VIL, CS2=VIH,
VIN = VIH or VIL, II/O = 0mA
3 mA
/CS1 = VIL, CS2 = VIH,
30 mA
VIN = VIH or VIL, Cycle Time = Min,
100% Duty, II/O = 0mA
ICC1 Average Operating Current
/CS1 < 0.2V, CS2 > Vcc-0.2V,
5 mA
VIN < 0.2V or VIN > Vcc-0.2V,
Cycle Time = 1us,
100% Duty, II/O = 0mA
/CS1 = VIH or CS2 = VIL or
0.1 mA
ISB Standby Current (TTL Input)
/UB, /LB = VIH
VIN = VIH or VIL
/CS1 > Vcc - 0.2V or
SL
-
8
uA
CS2 < Vss + 0.2V or
ISB1 Standby Current (CMOS Input)
/UB, /LB > Vcc - 0.2V
LL
1
20 uA
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V
VOL Output Low
IOL = 0.5mA
-
-
0.4 V
VOH Output High
IOH = -0.5mA
2.0 -
-
V
Note :
1. Typical values are at Vcc = 2.5V, TA = 25°C
2. Typical values are not 100% tested
CAPACITANCE
(Temp = 25°C, f = 1.0MHz)
Symbol
Parameter
CIN
Input Capacitance (Add, /CS1,CS2,/LB,/UB, /WE, /OE)
COUT
Output Capacitance (I/O)
Note : These parameters are sampled and not 100% tested
Condition
VIN = 0V
VI/O = 0V
Max.
8
10
Unit
pF
pF
Rev.00/May. 2001
3