HY57V64820HGTP Datasheet, PDF (4/11 Pages) Hynix Semiconductor – 4 Banks x 2M x 8Bit Synchronous DRAM

HY57V64820HGTP
ABSOLUTE MAXIMUM RATINGS
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature ⋅ Time
Symbol
TA
TSTG
VIN, VOUT
VDD, VDDQ
IOS
PD
TSOLDER
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260 ⋅ 10
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION (TA=0 to 70°C)
Unit
°C
°C
V
V
mA
W
°C ⋅ Sec
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
VDD, VDDQ
VIH
VIL
Min
3.0
2.0
VSSQ - 2.0
Typ.
3.3
3.0
0
Max
3.6
VDDQ + 2.0
0.8
Unit
V
V
V
Note :
1.All voltages are referenced to VSS = 0V
2.VIH (max) is acceptable 5.6V AC pulse width with ≤3ns of duration
3.VIL (min) is acceptable -2.0V AC pulse width with ≤3ns of duration
Note
1
1,2
1,3
AC OPERATING CONDITION (TA=0 to 70°C, VDD=3.3 ± 0.3V, VSS=0V)
Parameter
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level
Output Load Capacitance for Access Time Measurement
Symbol
VIH / VIL
Vtrip
tR / tF
Voutref
CL
Value
2.4/0.4
1.4
1
1.4
50
Note :
1. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF)
For details, refer to AC/DC output circuit
Unit
Note
V
V
ns
V
pF
1
Rev. 0.1/ Nov. 03
4