HY27UG088G5B Datasheet, PDF (4/53 Pages) Hynix Semiconductor – 8Gb NAND FLASH

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HY27UG088G(5/D)B Series
8Gbit (1Gx8bit) NAND Flash
1.SUMMARY DESCRIPTION
Hynix NAND HY27UG088G(5/D)B Series have 1024Mx8bit with spare 32Mx8 bit capacity. The device is offered in 3.3 Vcc
Power Supply, and with x8 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass
storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data
while old data is erased.
The device contains 8192 blocks, composed by 64 pages. A program operation allows to write the 2112-byte page in typi-
cal 200us and an erase operation can be performed in typical 1.5ms on a 128K-byte block.
Data in the page can be read out at 25ns cycle time per byte(x8). The I/O pins serve as the ports for address and data
input/output as well as command input.
This interface allows a reduced pin count and easy migration towards different densities, without any rearrangement of
footprint. Commands, Data and Addresses are synchronously introduced using CE, WE, RE ALE and CLE input pin. The
on-chip Program/Erase Controller automates all read, program and erase functions including pulse repetition, where
required, and internal verification and margining of data. The modify operations can be locked using the WP input. The
output pin R/B (open drain buffer) signals the status of the device during each operation. In a system with multiple mem-
ories the R/B pins can be connected all together to provide a global status signal.
The copy back function allows the optimization of defective blocks management. when a page program operation fails
the data can be directly programmed in another page inside the same array section without the time consuming serial
data insertion phase. Copy back operation automatically executes embedded error detection operation: 1 bit error
every 528byte (x8) can be detected. Due to this feature, it is no more nor necessary nor recommended to use external 2-
bit ECC to detect copy back operation errors. Data read out after copy back read (both for single and multiplane cases) is
allowed.
Even the write-intensive systems can take advantage of the HY27UG088G(5/D)B Series extended reliability of 100K pro-
gram/erase cycles by supporting ECC (Error Correcting Code) with real time mapping-out algorithm. The chip supports CE
don’t care function. This function allows the direct download of the code from the NAND Flash memory device by a micro-
controller, since the CE transitions do not stop the read operation.
This device includes also extra features like OTP/Unique ID area, Read ID2 extension.
The HY27UG088G(5/D)B Series are available in 48-TSOP1 12 x 20 mm, 52-ULGA 12 x 17mm.
1.1 Product List
PART NUMBER
HY27UG088G5B
HY27UG088GDB
ORGANIZATION
x8
Vcc RANGE
2.7V ~ 3.6V
PACKAGE
48-TSOP1
52-ULGA
Rev 0.2 / Jan. 2008
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