HMT325S6EFR8C Datasheet, PDF (4/50 Pages) Hynix Semiconductor – DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb E-die

Key Parameters
MT/s
DDR3-1066
DDR3-1333
DDR3-1600
DDR3-1866
Grade
-G7
-H9
-PB
-RD
tCK
(ns)
1.875
1.5
1.25
1.07
CAS
Latency
(tCK)
tRCD
(ns)
tRP
(ns)
tRAS
(ns)
tRC
(ns)
CL-tRCD-tRP
7
13.125 13.125 37.5 50.625
7-7-7
9
13.5
13.5
(13.125)* (13.125)*
36
49.5
(49.125)*
9-9-9
11
13.75 13.75
(13.125)* (13.125)*
35
48.75
(48.125)*
13
13.91 13.91
(13.125)* (13.125)*
34
47.91
(47.125)*
11-11-11
13-13-13
*SK hynix DRAM devices support optional downbinning to CL11, CL9 and CL7. SPD setting is programmed to match.
Speed Grade
Grade
CL5
CL6
-G7
667
800
-H9
667
800
-PB
667
800
-RD
800
Address Table
CL7
1066
1066
1066
1066
Frequency [MHz]
CL8
1066
1066
1066
1066
CL9
1333
1333
1333
CL10
1333
1333
1333
CL11
1600
1600
CL12
CL13
1866
Remark
Refresh Method
Row Address
Column Address
Bank Address
Page Size
2GB(1Rx8)
8K/64ms
A0-A14
A0-A9
BA0-BA2
1KB
4GB(2Rx8)
8K/64ms
A0-A14
A0-A9
BA0-BA2
1KB
Rev.1.3 /Sep. 2013
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