HMT325R7AFR8A-G7 Datasheet, PDF (4/76 Pages) Hynix Semiconductor – 240pin DDR3 SDRAM Registered DIMM

Key Parameters
MT/s
DDR3-1066
DDR3-1333
Grade
-G7
-H9
tCK
(ns)
1.875
1.5
CAS
Latency
(tCK)
tRCD
(ns)
7
13.125
9
13.5
tRP
(ns)
13.125
13.5
tRAS
(ns)
37.5
36
tRC
(ns)
50.625
49.5
CL-tRCD-tRP
7-7-7
9-9-9
Speed Grade
Grade
CL6
-G7
800
-H9
800
Frequency [MHz]
CL7
1066
1066
CL8
1066
1066
CL9
1333
CL10
1333
Remark
Address Table
2GB(1Rx8) 4GB(2Rx8) 4GB(1Rx4) 8GB(4Rx8) 8GB(2Rx4) 16GB(4Rx4)
Refresh
Method
8K/64ms
8K/64ms
8K/64ms
8K/64ms
8K/64ms
8K/64ms
Row Address
Column
Address
Bank Address
Page Size
A0-A13
A0-A9
BA0-BA2
1KB
A0-A13
A0-A9
BA0-BA2
1KB
A0-A13
A0-A9,A11
BA0-BA2
1KB
A0-A13
A0-A9
BA0-BA2
1KB
A0-A13
A0-A9,A11
BA0-BA2
1KB
A0-A13
A0-A9,A11
BA0-BA2
1KB
Rev. 0.1 / Nov. 2009
4