H5MS1222EFP-Q3E Datasheet, PDF (36/62 Pages) Hynix Semiconductor – 128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O

Mobile DDR SDRAM 128Mbit (4M x 32bit)
H5MS1222EFP Series
READ to WRITE
Data from READ burst must be completed or truncated before a subsequent WRITE command can be issued. If trun-
cation is necessary, the BURST TERMINATE command must be used, as shown in next fig. for the case of nominal
tDQSS.
/CLK
CLK
Command
READ
BST
NOP
W R ITE
NOP
NOP
Address
DQS
BA,
Col n
CL =2
BA,
Col b
tDQSS
DQ
Don
DI b
Command
Address
DQS
READ
BST
BA,
Col n
CL =3
NOP
NOP
W RITE
BA,
Col b
NOP
DQ
Don
DI b
DM
Don't Care
1) DO n = Data Out from column n; DI b = Data In to column b
2) Burst length = 4 or 8 in the cases shown; if the burst length is 2, the BST command can be ommitted
3) Shown with nominal tAC, tDQSCK and tDQSQ
Read to Write
Rev 1.0 / Jun. 2008
36