GM71C17400C Datasheet, PDF (3/10 Pages) Hynix Semiconductor – 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

GM71C(S)17400C/CL
DC Electrical Characteristics (VCC = 5.0V+/-10%, Vss = 0V, TA = 0 ~ 70C)
Symbol
VOH
VOL
ICC1
Parameter
Output Level
Output "H" Level Voltage (IOUT = -5mA)
Output Level
Output "L" Level Voltage (IOUT = 4.2mA)
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling : tRC = tRC min)
ICC2
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = VIH, DOUT = High-Z)
ICC3
RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(tRC = tRC min)
ICC4
Fast Page Mode Current
Average Power Supply Current
Fast Page Mode
(tPC = tPC min)
ICC5
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS >= VCC - 0.2V, DOUT = High-Z)
ICC6
CAS-before-RAS Refresh Current
(tRC = tRC min)
Min Max Unit Note
2.4 VCC
V
0
50ns -
60ns -
70ns -
0.4 V
100
90 _{mA 1, 2}
80
-
2
mA
50ns -
60ns -
70ns -
50ns -
60ns -
70ns ^-
-
-
50ns -
60ns -
70ns -
100
90 _{mA 2}
80
90
80 ^{mA 1, 3}
70
1 mA
150 uA ₄
100
90 _mA
80
Battery Backup Operating Current(Standby with CBR Refresh)
ICC7
(CBR refresh, tRC=62.5us, tRAS<=0.3us,
DOUT=High-Z, CMOS interface)
- 350 uA 4
Standby Current RAS = VIH
ICC8
CAS = VIL
DOUT = Enable
IL(I)
Input Leakage Current
Any Input (0V<=VIN<= 6V)
IL(O)
Output Leakage Current
(DOUT is Disabled, 0V<=VOUT<= 6V)
Note: 1. ICC depends on output load condition when the device is selected.
ICC(max) is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while CAS = VIH.
4. L-version.
-
5 mA 1
-10 10 uA
-10 10 uA
Rev 0.1 / Apr’01