English
Language : 

HY5DU12822C Datasheet, PDF (20/31 Pages) Hynix Semiconductor – 512Mb DDR SDRAM
IDD Specification
1HY5DU12422C(L)TP
HY5DU12822C(L)TP
HY5DU121622C(L)TP
128Mx4
Parameter
Symbol
Operating Current
IDD0
Operating Current
IDD1
Precharge Power Down Standby Current IDD2P
Idle Standby Current
IDD2F
Idle Quiet Standby Current
IDD2Q
Active Power Down Standby Current
IDD3P
Active Standby Current
IDD3N
Operating Current
IDD4R
Operating Current
IDD4W
Auto Refresh Current
IDD5
Self Refresh Current
Normal
Low Power
IDD6
Operating Current - Four Bank
Operation
IDD7
DDR400B
130
170
200
230
245
400
DDR333
120
150
180
210
225
350
Speed
DDR266A DDR266B
100
120
10
30
25
35
50
160
180
205
5
2.5
290
DDR200
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
64Mx8
Parameter
Symbol
Operating Current
IDD0
Operating Current
IDD1
Precharge Power Down Standby Current IDD2P
Idle Standby Current
IDD2F
Idle Quiet Standby Current
IDD2Q
Active Power Down Standby Current
IDD3P
Active Standby Current
IDD3N
Operating Current
IDD4R
Operating Current
IDD4W
Auto Refresh Current
IDD5
Self Refresh Current
Normal
Low Power
IDD6
Operating Current - Four Bank
Operation
IDD7
DDR400B
130
170
210
230
245
400
DDR333
120
150
190
210
225
350
Speed
DDR266A DDR266B
100
120
10
30
25
35
50
170
180
205
5
2.5
290
DDR200
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Rev. 1.0 / Mar. 2005
20