HY62SF16806A Datasheet, PDF (2/11 Pages) Hynix Semiconductor – 512Kx16bit full CMOS SRAM

HY62SF16806A
FEATURES
DESCRIPTION
• Fully static operation and Tri-state output
The HY62SF16806A is a high speed, super low
power and 8Mbit full CMOS SRAM organized as
524,288 words by 16bits. The HY62SF16806A
uses high performance full CMOS process
technology and is designed for high speed and low
• TTL compatible inputs and outputs
• Battery backup(LL/SL-part)
- 1.2V(min) data retention
• Standard pin configuration
- 48-uBGA
power circuit technology. It is particularly well-
suited for the high density low power system
application. This device has a data retention mode
that guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
Product
Voltage Speed
Operation
Standby Current(uA) Temperature
No.
(V)
(ns)
Current/Icc(mA)
LL
SL
(°C)
HY62SF16806A-C 1.7~2.3 70/85/100
3
25
8
0~70
HY62SF16806A-I 1.7~2.3 70/85/100
3
25
8
-40~85
Note 1. C : Commercial, I : Industrial
2. Current value is max.
PIN CONNECTION ( Top View )
BLOCK DIAGRAM
1 2 34 5 6
A
/LB /OE A0 A1 A2 CS2
B
IO9 /UB A3 A4 /CS1 IO1
C
IO10 IO11 A5 A6 IO2 IO3
D
Vss IO12 A17 A7 IO4 Vcc
E
Vcc IO13 Vss A16 IO5 Vss
IO15 IO14 A14 A15 IO6 IO7
F
A18
G
IO16 NC A12 A13 /WE IO8
H
A18 A8 A9 A10 A11 NC
/CS1
CS2
/OE
/LB
/UB
/WE
ROW
DECODER
MEMORY ARRAY
512K x 16
I/O1
I/O8
I/O9
I/O16
PIN DESCRIPTION
Pin Name
/CS1, CS2
/WE
/OE
/LB
/UB
Pin Function
Chip Select
Write Enable
Output Enable
Lower Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A18
Vcc
Vss
NC
Pin Function
Data Inputs / Outputs
Address Inputs
Power(1.7V~2.3V)
Ground
No Connection
Rev.03 /Jan. 2002
2