HY5DU12422BT_06 Datasheet, PDF (18/31 Pages) Hynix Semiconductor – 512Mb DDR SDRAM

1HY5DU12422B(L)T
HY5DU12822B(L)T
HY5DU121622B(L)T
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature (Ambient)
Storage Temperature
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Voltage on inputs relative to VSS
Voltage on I/O pins relative to VSS
Output Short Circuit Current
Soldering Temperature ⋅ Time
Symbol
TA
TSTG
VDD
VDDQ
VINPUT
VIO
IOS
TSOLDER
Rating
0 ~ 70
-55 ~ 150
-1.0 ~ 3.6
-1.0 ~ 3.6
-1.0 ~ 3.6
-0.5 ~3.6
50
260 ⋅ 10
Note: Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS (TA=0 to 70 ^oC, Voltage referenced to VSS = 0V)
Unit
o_C
o_C
V
V
V
V
mA
o_{C ⋅ Sec}
Parameter
Power Supply Voltage (DDR200, 266, 333)
Power Supply Voltage (DDR200, 266, 333)¹
Power Supply Voltage (DDR400)
Power Supply Voltage (DDR400)¹
Input High Voltage
Input Low Voltage²
Termination Voltage
Reference Voltage³
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs⁴
V-I Matching: Pullup to Pulldown Current Ratio⁵
Input Leakage Current⁶
Output Leakage Current⁷
Normal Strength
Output Driver
(VOUT=VTT ± 0.84)
Output High Current
(min VDDQ, min VREF, min VTT)
Output Low Current
(min VDDQ, max VREF, max VTT)
Half Strength
Output Driver
(VOUT=VTT ± 0.68)
Output High Current
(min VDDQ, min VREF, min VTT)
Output Low Current
(min VDDQ, max VREF, max VTT)
Symbol
VDD
VDDQ
VDD
VDDQ
VIH
VIL
VTT
VREF
VIN(DC)
VID(DC)
VI(RATIO)
ILI
ILO
IOH
IOL
IOH
IOL
Min
2.3
2.3
2.5
2.5
VREF + 0.15
-0.3
VREF - 0.04
0.49*VDDQ
-0.3
0.36
0.71
-2
-5
-16.8
16.8
-13.6
13.6
Typ.
2.5
2.5
2.6
2.6
-
-
VREF
0.5*VDDQ
-
-
-
-
-
-
-
-
-
Max
2.7
2.7
2.7
2.7
VDDQ + 0.3
VREF - 0.15
VREF + 0.04
0.51*VDDQ
VDDQ+0.3
VDDQ+0.6
1.4
2
5
-
-
-
-
Unit
V
V
V
V
V
V
V
V
V
V
-
uA
uA
mA
mA
mA
mA
Note:
1. VDDQ must not exceed the level of VDD.
2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same.
Peak to peak noise on VREF may not exceed ± 2% of the DC value.
4. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temper-
ature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum dif-
ference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum
pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
6. VIN=0 to VDD, All other pins are not tested under VIN = 0V.
7. DQs are disabled, VOUT=0 to VDDQ
Rev. 1.1 / Apr. 2006
18