HYMD216646A6J-J Datasheet, PDF (1/18 Pages) Hynix Semiconductor – Unbuffered DDR SDRAM DIMM

DESCRIPTION
16Mx64 bits
Unbuffered DDR SDRAM DIMM
HYMD216646A6J-D4/D43/J
PRELIMINARY
Hynix HYMD216646A6J-D4/D43/J series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Lin
Memory Modules (DIMMs) which are organized as 16Mx64 high-speed memory arrays. Hynix HYMD216646A6J-D4/
D43/J series consists of four 16Mx16 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate.
Hynix HMD216646A6J-D4/D43/J series provide a high performance 8-byte interface in 5.25" width form factor of
industry standard. It is suitable for easy interchange and addition.
Hynix HYMD216646A6J-D4/D43/J series is designed for high speed of up to 200MHz and offers fully synchronous
operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs
are latched hed on the rising edges of the clock, Data, Data strobes(UDQS/LDQS) and Write data masks(UDM/LDM)
inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to
achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_2. High speed frequencies,
programmable latencies and burst lengths allow variety of device operation in high performance memory system.
Hynix HYMD216646A6J-D4/D43/J series incorporates SPD(serial presence detect). Serial presence detect function is
implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify
DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.
FEATURES
• 128MB (16M x 64) Unbuffered DDR DIMM based on • Data inputs on DQS centers when write (centered
16Mx16 DDR SDRAM
DQ)
• JEDEC Standard 184-pin dual in-line memory mod-
ule (DIMM)
• Data strobes synchronized with output data for read
and input data for write
• 2.5V +/- 0.2V VDD and VDDQ Power supply
• Programmable CAS Latency 2 / 2.5 / 3 supported
• All inputs and outputs are compatible with SSTL_2
interface
• Programmable Burst Length 2 / 4 / 8 with both
sequential and interleave mode
• Fully differential clock operations (CK & /CK) with
• tRAS Lock-out function supported
125MHz/133MHz/166MHz/200MHz
• Internal four bank operations with single pulsed RAS
• All addresses and control inputs except Data, Data
strobes and Data masks latched on the rising edges ^{• Auto refresh and self refresh supported}
of the clock
• 8192 refresh cycles / 64ms
• Data(DQ), Data strobes and Write masks latched on
both rising and falling edges of the clock
ORDERING INFORMATION
Part No.
HYMD216646A6J-J
HYMD216646A6J-D4
HYMD216646A6J-D43
Power Supply
VDD=VDDQ=2.5V
Clock Frequency Interface
166MHz (DDR333)
SSTL_2
VDD=VDDQ=2.6V
200MHz (DDR400)
SSTL_2
VDD=VDDQ=2.6V
200MHz (DDR400)
SSTL_2
Form Factor
184pin Unbuffered DIMM
5.25 x 1.25 x 0.15 inch
184pin Unbuffered DIMM
5.25 x 1.25 x 0.15 inch
184pin Unbuffered DIMM
5.25 x 1.25 x 0.15 inch
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.2 / Apr. 2003
1