HY64UD16322M Datasheet, PDF (1/11 Pages) Hynix Semiconductor – 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM

HY64UD16322M Series
Document Title
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
Revision history
Revision No.
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
History
Initial
Revised
- Change Pin Connection
- Improve tOE from 45ns to 30ns
- Correct State Diagram
Revised
- Correct Package Dimension
- Change Absolute Maximum Ratings
Revised
- DC Electrical Characteristics (ISB1,IDPD,ICC1)
- State Diagram
- Power Up Sequence
- Deep Power Down Sequence
- Read/Write Cycle Note
- Release standby current from 100µA to 120µA
Revised
- DC Electrical Characteristics (ICC1: 3mA -> 5mA)
Revised
- Add 70ns Part
- Power Up Sequence
Revised
- Improve ICC2@70ns 30mA to 25mA
- Improve ICC2@85ns 30mA to 20mA
- Improve Ambient Temperature C/E to E/I
(0°C~85°C/-25°C~85°C → -25°C~85°C/-40°C~85°C)
- Improve Maximum Absolute Ratings
(Vdd : -0.3V to 3.3V → -0.3V to 3.6V)
- Improve tOE@85ns 30ns to 20ns
Revised
- Pin Description
- Power Up & Deep Power Down Exit Sequence
Draft Date
Jan. 04. ’ 01
Jul. 03. ’ 01
Jul. 18. ’ 01
Oct. 06. ’ 01
Nov. 07. ’ 01
Dec. 20. ‘ 01
Feb. 27. ‘ 02
Mar. 11. ‘ 02
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not
assume any responsibility for use of circuits described. No patent licenses are implied.
Revision 1.7
1
March. 2002