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HY62SF16804A Datasheet, PDF (1/10 Pages) Hynix Semiconductor – 512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
Revision History
Revision No History
04
Initial Revision History Insert
Revised
- Reliability Spec Deleted
05
Change AC Characteristics
- tCLZ : 10/10/20 ---> 10/10/10
- tBLZ : 5/5/5 ---> 10/10/10
06
Part Number is changed
- HY62QF16803A --> HY62QF16804A
07
Marking Instruction is inserted
08
Test Condition Changed
- ILO / ISB / ISB1 / VDR / ICCDR
Marking Istruction Inserted
09
Change Logo
- Hyundai à Hynix
10
AC Parameter is changed
- tCHZ : 30ns --> 20ns
- tBHZ : 30ns --> 20ns
- tOHZ : 30ns --> 20ns
11
Change DC Parameter
- Icc1(1us) : 5mA à 4mA
Change Data Retention
- IccDR(LL) : 25uA à 15uA
Change AC Parameter
- tOE
: 40ns à 35ns@70ns
HY62SF16804A Series
512Kx16bit full CMOS SRAM
Draft Date
Jul.02.2000
Remark
Preliminary
Oct.23.2000 Preliminary
Nov.13.2000 Preliminary
Dec.5.2000 Preliminary
Dec.16.2000 Preliminary
Apr.28.2001
Jul.18.2001
Jan.28.2002
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.11 /Jan. 2002
Hynix Semiconductor