H5MS2562JFR-E3M Datasheet, PDF (1/62 Pages) Hynix Semiconductor – 256Mb (16Mx16bit) Mobile DDR SDRAM

256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O
Specification of
256Mb (16Mx16bit) Mobile DDR SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x16
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.2 / July. 2009
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