HY8N50T Datasheet, PDF (3/4 Pages) HY ELECTRONIC CORP. – 500V / 8.0A N-Channel Enhancement Mode MOSFET

HY8N50T / HY8N50FT
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
20
V_GS= 20V~ 8.0V
15
7.0V
100
V_DS =50V
10
10
6.0V
5
5.0V
0
0
10
20
30
40
50
V_DS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
T_J = 125^oC
1
25^oC
-55^oC
0.1
1
2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
V_GS=10V
V_GS = 20V
4
8
12
I_D - Drain Current (A)
3
I_D =4.0A
2.5
2
1.5
1
0.5
0
16
3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
Fig.3 On-Resistance vs Drain Current
Fig.4 On-Resistance vs Gate to Source Voltage
2000
1600
f = 1MHz
V_GS = 0V
1200
Ciss
800
Coss
400
Crss
0
0
5
10 15 20 25 30
V_DS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
12
I_D =8.0A
10
VDS=400V
VDS=250V
8
VDS=100V
6
4
2
0
0
5
10 15 20 25 30
Q_g - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
REV 1.0 : AUG. 2011
PAGE. 3