HY80N075T Datasheet, PDF (3/4 Pages) HY ELECTRONIC CORP. – 75V / 80A N-Channel Enhancement Mode MOSFET

HY80N075T
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
200
10
V_GS= 10V
7.0V
160
9
120
6.5V
80
6.0V
40
0
0
5.5V
5.0V
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
8
7
V_GS=10V
6
5
4
0
20
40
60
80
100
I_D - Drain Current (A)
Fig.2 On-Resistance vs Drain Current
20
16
12
8
4
0
5
I_D =40A
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
2
V_GS =10 V
1.8
I_D =40A
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (^oC)
Fig.3 On-Resistance vs Gate to Source Voltage
Fig.4 On-Resistance vs Junction Temperature
6000
5000
4000
f = 1MHz
V_GS = 0V
12
V_DS=30V
10
I_D =40A
Ciss
8
3000
6
2000
1000
Coss
Crss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
REV.1, 5-May-2012
4
2
0
0
20
40
60
80
100
Q_g - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
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