HY2N65D Datasheet, PDF (3/4 Pages) HY ELECTRONIC CORP. – 650V / 2A N-Channel Enhancement Mode MOSFET

HY2N65D / HY2N65M
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
5
V_GS= 20V~ 8.0V
4
7.0V
10
V_DS =50V
3
6.0V
2
1
5.0V
0
0
10
20
30
40
50
V_DS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
1
T_J = 125^oC
25^oC
-55^oC
0.1
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V_GS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
10
9
8
7
6
5
V_GS=10V
4
V_GS = 20V
3
2
0
1
2
3
4
I_D - Drain Current (A)
Fig.3 On-Resistance vs Drain Current
12
I_D =1.0A
10
8
6
4
2
0
5
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
Fig.4 On-Resistance vs Gate to Source Voltage
500
400
Ciss
300
f = 1MHz
V_GS = 0V
200
Coss
100
Crss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
12
I_D =2.0A
10
VDS=520V
VDS=325V
8
VDS=130V
6
4
2
0
0
1
2
3
4
5
6
7
Q_g - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
REV 1.0, 20-Sept-2012
PAGE.3