HY2N60T Datasheet, PDF (3/4 Pages) HY ELECTRONIC CORP. – 600V / 2.0A N-Channel Enhancement Mode MOSFET

HY2N60T / HY2N60FT
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
5
V_GS= 20V~ 7.0V
4
10
V_DS =50V
3
6.0V
2
5.0V
1
0
0
10
20
30
40
50
V_DS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
1
25^oC
T_J = 125^oC
-55^oC
0
123456789
V_GS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
8
8
7
I_D =1.0A
7
6
6
5
5
V_GS=10V
4
4
V_GS=20V
3
3
2
0
1
2
3
4
5
6
I_D - Drain Current (A)
2
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
Fig.3 On-Resistance vs Drain Current
Fig.4 On-Resistance vs Gate to Source Voltage
500
f = 1MHz
V_GS = 0V
400
300
Ciss
200
Coss
100
Crss
0
0
5
10 15 20 25 30
V_DS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
12
I_D =2.0A
10
VDS=480V
VDS=300V
8
VDS=120V
6
4
2
0
0
2
4
6
8
10
Q_g - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
REV 1.0 : AUG. 2011
PAGE. 3