R1200 Datasheet, PDF (2/2 Pages) Zowie Technology Corporation – HIGH VOLTAGE SILICON RECTIFIER

RATING AND CHARACTERISTIC CURVES
R1200/R1200F SERIES
FIG.1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50Ω
10Ω
NONINDUCTIVE NONINDUCTIVE
+0.5A
(+)
25 VDC
(APPROX)
(-)
D.U.T
1Ω
NON-
INDUCTIVE
（-）
PULSE
GENERATOR
（NOTE 2）
OSCILLOSCOPE
（NOTE 1）
（+）
NOTES: 1. Rise Time=7ns max,Input impedance=
1 megohm,22pF
2. Rise Time=10ns max,Source Impedance=
50 oh ms.
0
-0.25A
-1.0A
TRR
1CM
SET TIME BASE
FOR 50/1000ns/cm
FIG. 2 – FORWARD CURRENT DERATING CURVE
0.6
R1200-R2000
0.5
0.4
0.3
R2500-R5000
0.2
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
0.375”LEAD LENGTH
0.1
0
25
50
75
100
125 150 175
AMBIENT TEMPERATURE (℃)
FLG.3 –TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
R1200-5000
10
R1200-2000F R2500-5000
R2500-5000F
1.0
0.5
TJ = 25°C
0.1
0.01
1.0 2.0 3.0 4.0 5.0 6.0 7.0
INSTANTANEOUS FORWARD VOLTAGE.VOLTS
FIG.4-PEAK FORWARD SURGE CURRENT
50
40
30
20
10
0
12
4
10 20
40
100
NUMBER OF CYCLES AT 60Hz
~ 44 ~