HYESD2045FN2 Datasheet, PDF (2/2 Pages) HY ELECTRONIC CORP. – Sigle Channel Low Capacitance ESD Protection Diode Array

HYESD2045FN2
Maximum Rating and Thermal Characteristics ( T_C=25℃ )
Parameter
Peak Pulse Power(8/20μs)
Peak Pulse Current(8/20μs)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating Temperature Range
Storage Temperature Range
Symbol
P_PP
I_PP
V_ESD
V_ESD
T_op
T_stg
Value
Unit
120
W
5
A
+15KV
V
+10KV
V
-55 to +125
℃
-55 to +150
℃
Electrical Characteristics ( T_C=25℃, unless otherwise noted )
Parameter
Reverse Working Voltage
Reverse Breakdown Voltage
Symbol Test Condition
V_RWM I/O pin to GND
V_BR
I_BR =1mA;
I/O pin to GND
Min Typ Max Unit
-
-
5
V
6
-
V
Reverse Leakage Current
I_R
V_RWM =5V, T=25°C;
I/O pin to GND
-
-
1
uA
Positive Clamping Voltage
I_PP=1A, t_P=8/20us;
V_C Positive pulse;
I/O pin to GND
-
8.5
12
V
Negative Clamping Voltage
I_PP=1A, t_P=8/20us;
V_C Negative pulse;
I/O pin to GND
-
1.8
-
V
Junction Capacitance
Between I/O And GND
C_J
V_R=0V, f=1MHz;
I/O pin to GND
-
0.5
0.9
pF
REV. 0.9, 16-May-2012