HYESD0524A6 Datasheet, PDF (2/4 Pages) HY ELECTRONIC CORP. – 4 Channel Low Capacitance ESD Protection Diode Array

HYESD0524A6 / HYESD0524B6
Maximum Rating and Thermal Characteristics ( T_C=25℃ )
Parameter
Peak Pulse Power(8/20μs)
Peak Pulse Current(8/20μs)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating Temperature Range
Storage Temperature Range
Symbol
P_PP
I_PP
V_ESD
V_ESD
T_op
T_stg
Value
Unit
150
W
5
A
+17KV
V
+12KV
V
-55 to +125
℃
-55 to +150
℃
Electrical Characteristics ( T_C=25℃, unless otherwise noted )
Parameter
Reverse Working Voltage
Reverse Breakdown Voltage
Symbol Test Condition
Min
V_RWM Any I/O pin to GND
-
V_BR
I_BR =1mA;
I/O pin to GND
6
Reverse Leakage Current
I_R
V_RWM =5V, T=25°C;
I/O pin to GND
-
Positive Clamping Voltage
I_PP=1A, t_P=8/20us;
V_C Positive pulse;
-
Any I/O pin to GND
Negative Clamping Voltage
I_PP=1A, t_P=8/20us;
V_C Negative pulse;
-
Any I/O pin to GND
Junction Capacitance
Between Channel
Junction Capacitance
Between I/O And GND
C_J
V_R=0V, f=1MHz;
Between I/O pins
-
C_J
V_R=0V, f=1MHz;
Any I/O pin to GND
-
Typ
-
-
-
8.5
1.8
0.35
-
Max
5
1
12
-
0.45
0.9
Unit
V
V
uA
V
V
pF
pF
REV. 1, 05-May-2012