HY8N65T Datasheet, PDF (2/4 Pages) HY ELECTRONIC CORP. – 650V / 8A N-Channel Enhancement Mode MOSFET

HY8N65T / HY8N65FT
Electrical Characteristics ( T_C=25^OC unless otherwise noted )
Parameter
S ymb o l
Te s t C o nd i ti o n
Min.
Static
Drain-Source Breakdown Voltag e
B V _DSS
V_GS=0V, I _D=250uA
650
Gate Threshold Voltage
V _GS(th)
V _DS=V _GS, I _D=250uA
2.0
Drain-Source On-State
Resistance
R _{D S (o n)}
V_GS= 10V, I _D= 4.0A
-
Zero Gate Voltage Drain
C urr e nt
I _DSS
V_DS=650V, V_GS=0V
-
Gate Body Leakage
I _GSS
V_GS=+30V, V_DS=0V
-
Dynamic
To ta l Ga te C ha r g e
Gate-Source Charge
Gate-Drain Charge
Q_g
-
Q _gs
V _DS=520V, I_D=8A ,
V _GS=1 0 V
-
Q _gd
-
Turn-On D e la y Ti me
t _d(on)
-
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
t_r
V_DD=325V, I_D =8A
-
t _d(off)
V _GS= 1 0 V, R_G=25Ω
-
Turn-Off F a ll Ti me
t_f
-
Input Capaci tance
Output Capacitance
Re ve rs e Tra ns fe r
C a p a c i ta nc e
C _iss
-
C _oss
V_DS=25V, V_GS=0V
f=1.0MH_Z
-
C _rss
-
Source-Drain Diode
Max. Diode Forward Current
I_S
-
-
Max.Pulsed Source Current
I _SM
-
-
Diode Forward Voltage
V _SD
I_S=8A , V _GS=0 V
-
Re ve rs e Re c o ve ry Ti me
t _rr
V _GS=0V, I_F=8A
-
Reverse Recovery Charge
Q _rr
d i /d t=1 0 0 A /us
-
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
Typ .
-
-
1.2
-
-
28.6
7.6
8.4
13.2
18.6
42.6
16.8
900
120
2.2
-
-
-
380
3.6
Max. Units
-
V
4.0
V
1.4
Ω
10
uA
+100 nΑ
38
-
nC
-
18
32
ns
56
22
11 2 0
180
pF
6.8
8
A
32
A
1.3
V
-
ns
-
uC
REV1.0 : AUG. 2011
PAGE . 2