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| HY80N07T Datasheet, PDF (2/4 Pages) HY ELECTRONIC CORP. – 65V / 80A N-Channel Enhancement Mode MOSFET | |||
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Electrical Characteristics ( TC=25â, Unless otherwise noted )
Parameter
Symbol Test Condition
Min. Typ.
Static
Drain-Source Breakdown Voltage BVDSS
VGS=0VãID=250uA
65
-
Gate Threshold Voltage
VGS(th)
VDS=VGSãID=250uA
2
3
Drain-Source On-State Resistance RDS(ON)
VGS=10VãID=30A
-
5.8
Zero Gate Voltage Drain Current IDSS
VDS=52VãVGS=0V
-
-
Gate Body Leakage Current
IGSS
VGS=+20VãVDS=0V
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=30VãID=30A
VGS=10V
-
122
-
36
-
46
Turn-On Delay Time
td(on)
-
28
Turn-On Rise Time
Turn-Off Delay Time
tr
VDD=30VãID=30A
-
22.6
td(off)
VGS=10VãRG=3.6W
-
95
Turn-Off Fall Time
tf
-
38
Input Capacitance
Ciss
Output Capacitance
Coss
VDS=30VãVGS=0V
f=1.0MHZ
Reverse Transfer Capacitance
Crss
-
4850
-
660
-
320
Gate Resistance
Rg
-
1.5
Source-Drain Diode
Max. Diode Forwad Voltage
IS
-
-
-
Diode Forward Voltage
VSD
IS=30AãVGS=0V
-
0.84
Reverse Recovery Time
Reverse Recovery Charge
trr
VGS=0VãIS=30A
Qrr
di/dt=100A/us
-
42
-
65
NOTE : Pulse Test : Pulse Width ⦠300us, duty cycle ⦠2%
HY80N07T
Max. Units
-
V
4
V
7.2
mW
1
uA
100
nA
-
-
nC
-
-
-
ns
-
-
-
-
pF
-
-
W
120
A
1.4
V
-
ns
-
uC
REV. 1.0, 30-Jul-2012
PAGE.2
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