WO Datasheet, PDF (1/2 Pages) HY ELECTRONIC CORP. – SILICON BRIDGE RECTIFIERS

SILICON BRIDGE RECTIFIERS
FEATURES
●Surge overload rating -50 amperes peak
●Ideal for printed circuit board
●Reliable low cost construction utilizing molded plastic
technique results in expensive product
●Mounting position:Any
WO/WOM SERIES
REVERSE VOLTAGE - 50 to 1000Volts
FORWARD CURRENT - 1.5 Amperes
.220(5.6)
.200(5.1)
WOB
.366(9.3)
.350(8.9)
.181(4.6)
.150(3.8)
WOBM
.386(9.8)
.354(9.0)
1.1
(27.9)
MIN
1.0
(25.4)
MIN
1.1
(27.9)
MIN
1.0
(25.4)
MIN
POS.
LEAD
.032(0.81)
.028(0.71)
POS.
LEAD
.032(0.81)
.028(0.71)
.220(5.6)
.220(5.6)
.180(4.6)
.180(4.6)
.220(5.6)
.180(4.6)
SPACING
.220(5.6)
.180(4.6)
SPACING
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
W005 W01
SYMBOL
W005M W01M
W 02
W 02M
W 04
W 04M
W 06
W 06M
W 08
W 08M
W 10
W 10M
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current ,
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load
I²t Rating for Fusing (t＜8.3ms)
Maximum Forward Voltage Drop
Per Element at 1.5A Peak
Maximum Reverse Current at Rated
DC Blocking Voltage
Operating Temperature Range
@TA=25℃
TJ=25℃
TJ=100℃
VDC
50
100
200
400
600
800
1000
V
I(AV)
1.5
A
IFSM
50
A
I²t
5.0
A²s
VF
1.1
V
IR
10.0
µA
1.0
mA
TJ
-55 to +125
℃
Storage Temperature Range
TSTG
-55 to +150
℃
~ 310 ~