SS52B_17 Datasheet, PDF (1/3 Pages) HY ELECTRONIC CORP. – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
● Metal-Semiconductor junction with gard ring
● Epitaxial construction
● Low forward voltage drop
● High current capability
● The plastic material carries UL recognition 94V-0
● For use in low vlotage, high frequency inverters,
free wheeling, and polarity protection applications
SS52B thru SS510B
REVERSE VOLTAGE - 20 to 100 Volts
FORWARD CURRENT - 5.0 Amperes
SMB
.083(2.11)
.075(1.91)
.185(4.70)
.160(4.06)
.155(3.94)
.130(3.30)
MECHANICAL DATA
●Case： Molded Plastic
●Polarity:Color band denotes cathode
●Weight: 0.003 ounces,0.093 grams
.096(2.44)
.084(2.13)
.060(1.52)
.030(0.76)
.220(5.59)
.195(4.95)
.008(.203)
.002(.051)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375″（9.5mm) Lead Lengths
@TL=95 ℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Maximum Forward Voltage at 5.0A DC
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
Typical Junction Capacitance (Note1)
@TJ=25℃
@TJ=100℃
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
SYMBOL SS52B
VRRM
20
VRMS
14
VDC
20
I(AV)
IFSM
VF
IR
CJ
RθJA
TJ
TSTG
NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance junction to ambient,
3.The typical data above is for reference only(典型值仅供参考).
SS53B
30
21
30
SS54B
40
28
40
SS55B
50
35
50
SS56B
60
42
60
SS58B SS510B
80
100
56
70
80
100
5.0
150
0.55
0.7
0.85
1.0
50
500
350
75
-55 to +150
-55 to +150
UNIT
V
V
V
A
A
V
mA
pF
℃/W
℃
℃
Rev. 7, 16-Mar-2017