SS510_17 Datasheet, PDF (1/3 Pages) HY ELECTRONIC CORP. – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
● Metal-Semiconductor junction with gard ring
● Epitaxial construction
● Low forward voltage drop
● High current capability
● The plastic material carries UL recognition 94V-0
● For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
SS52 thru SS510
REVERSE VOLTAGE - 20 to 100 Volts
FORWARD CURRENT - 5.0 Amperes
SMC
.128(3.25)
.108(2.75)
.280(7.11)
.260(6.60)
.245(6.22)
.220(5.59)
MECHANICAL DATA
●Case： Molded Plastic
●Polarity:Color band denotes cathode
●Weight: 0.007 ounces,0.21 grams
.103(2.62)
.079(2.00)
.060(1.52)
.030(0.76)
.320(8.13)
.305(7.75)
.008(.203)
.002(.051)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375″（9.5mm) Lead Lengths
@TL=95 ℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Maximum Forward Voltage at 5.0A DC
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
Typical Junction Capacitance (Note1)
@TJ=25℃
@TJ=100℃
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
CJ
RθJA
TJ
TSTG
SS52
20
14
20
NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance junction to ambient,
3.The typical data above is for reference only(典型值仅供参考).
SS53
30
21
30
0.55
500
15
SS54
40
28
40
SS55
50
35
50
5.0
SS56
60
42
60
SS58
80
56
80
SS510
100
70
100
150
0.7
1.0
50
-55 to +150
-55 to +150
0.85
350
10
UNIT
V
V
V
A
A
V
mA
pF
℃/W
℃
℃
Rev. 7, 16-Mar-2017