SBR25 Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – SILICON PASSIVATED THREE PHASE BRIDGE RECTIFIERS

SBR25/35A SERIES
SILICON PASSIVATED THREE PHASE
REVERSE VOLTAGE - 50 to 1600 Volts
BRIDGE RECTIFIERS
FORWARD CURRENT - 15/25/35 Ampreres
FEATURES
●Diffused Junction
SBR
METAL HEAT SINK
●Low Forward Voltage Drop
●High Current Capability
.453(11.5)
.413(10.5)
●High Reliability
●High Surge Current Capability
●Ideal for Printed Circuit Boards
MECHANICAL DATA
●Case:Epoxy Case with Heat Sink lnterally
Mounted in the Bridge Encapsulation
●Terminals:Plated Leads Soiderable per
MIL-STD-202,Method 208
Hole for
No.8 screw
193"(4.9)diam
.254(6.45)
.242(6.15)
.035(0.9)
.028(0.7)
●Polarity:As Marked on Body
●Weight:20 grams(approx.)
●Mounting Position:
Bolt Down on Heatsink With Silicone Thermal
1.004(22.5)
.965(24.5)
1.130(28.7)
1.114(28.3)
Compound Between Bridge and Mounting Surface
for Maximum Heat Transfer Efficiency
●Mounting Torque:20 in lbs. Max.
●Marking:Type Number
.886(22.5)
.846(21.5)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%
VOLTAGE RATINGS
CHARACTERISTICS
SYMBOL -00 -01 -02 -04 -06 -08 -10 -12 -14 -16 UNIT
Peak Repetitive Voltage
VRRM
Working Peak Reverse Voltage
VRWM 50 100 200 400 600 800 1000 1200 1400 1600
V
DC Blocking Voltage
VR
Peak Non_Repetitive Reverse Voltage
VRSM 75 150 275 500 725 900 1100 1300 1500 1700
V
RMS Reverse Voltage
FORWARD CONDUCTION
CHARACTERISTICS
VR(RMS) 35 70 140 280 420 560 700 840 980 1120
V
SYMBOL
SBR25
SBR35
UNIT
Maximum Average Forward
Rectified Current @TC=100℃
IO
25
35
A
Non-Repetitive Peak Forward Surge Current
(No Voltage Reapplied t=8.3ms at 60HZ)
375
500
(No Voltage Reapplied t=10ms at 50HZ)
IFSM
360
475
A
(100% VRRM Reapplied t=8.3ms at 60HZ)
314
420
(100% VRRM Reapplied t=10ms at 50HZ)
300
400
I2t Rating for fusing
(No Voltage Reapplied t=8.3ms at 60HZ)
580
(No Voltage Reapplied t=10ms at 50HZ)
I² t
635
1030
1130
A² S
(100% VRRM Reapplied t=8.3ms at 60HZ)
410
730
(100% VRRM Reapplied t=10ms at 50HZ)
450
800
Forward Voltage (per element)
@TJ=25℃,@IFM=40APK per single junction
VF
1.26
1.19
V
Peak Reverse Current (per leg) @TJ=25℃
IR
At Rated DC Blocking Voltage @TJ=125℃
10
uA
5.0
mA
RMS lsolation Voltage from Case to Lead
VISO
2500
V
THERMAL CHARACTERISTICS
Operating Temperature Range
TJ
-55 to +150
℃
Storage Temperature Range
TSTG
-55 to +150
℃
Thermal Resistance Junction to Case at
RθJC
1.42
DC Operation per Bridge
1.16
K/W
Thermal Resistance Case to Heatsink
RθCS
0.2
K/W
Mounting Surface, Smooth, Flat and Greased
~ 389 ~